mimix broadband?s three stage 17.0-24.0 ghz gaas mmic buffer amplifier has a small signal gain of 18.0 db with a +27.0 dbm p1db output compression point across much of the band. the device also includes an on-chip temperature compensated output power detector. this mmic uses mimix broadband?s gaas phemt device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. the chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. this device is well suited for millimeter-wave point-to-point radio, lmds, satcom and vsat applications. 17.0-24.0 ghz gaas mmic power amplifier excellent transmit output stage temperature compensated output detector 18.0 db small signal gain +27.0 dbm p1db compression point 100% on-wafer rf, dc and output power testing 100% commercial-level visual inspection using mil-std-883 method 2010 features general description absolute maximum ratings supply voltage (vd) supply current (id1,2,3) gate bias voltage (vg) input power (pin) storage temperature (tstg) operating temperature (ta) channel temperature (tch) +6.0 vdc 145, 290, 580 ma +0.3 vdc +19.0 dbm -65 to +165 o c -55 to mttf graph 1 mttf graph 1 chip device layout page 1 of 8 (1) channel temperature affects a device's mttf. it is recommended to keep channel temperature as low as possible for maximum life. electrical characteristics (ambient temperature t = 25 o c) parameter frequency range (f ) input return loss (s11) output return loss (s22) small signal gain (s21) gain flatness ( s21) reverse isolation (s12) output power for 1db compression (p1db) drain bias voltage (vd1,2,3) (vdet) gate bias voltage (vg1,2,3) supply current (id1) (vd=5.0v, vg=-0.7v typical) supply current (id2) (vd=5.0v, vg=-0.7v typical) supply current (id3) (vd=5.0v, vg=-0.7v typical) detector (diff ) output at 20 dbm 3 units ghz db db db db db dbm vdc vdc ma ma ma vdc min. 17.0 - - - - - - - -1.0 - - - - typ. - 9.0 10.0 18.0 +/-1.0 45.0 +27.0 +5.0 -0.7 100 200 400 0.38 max. 24.0 - - - - - - +5.5 0.0 120 240 480 - (2) measured using constant current. (3) measured with vd4=5.0v 2 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2008 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. october 2008 - rev 10-oct-08 p1019-bd
17.0-24.0 ghz gaas mmic power amplifier power amplifier measurements page 2 of 8 0696nd 028ab201 (bcb): pout vs. freq @ pin=+13 dbm vd1=vd2=vd3=5 v, regulated id1=100 ma, id2=200 ma, id3=400 ma 20 21 22 23 24 25 26 27 28 29 30 17 17.5 18 18.5 19 19.5 20 20.5 21 21.5 22 22.5 23 23.5 24 frequency (ghz) output power (dbm) , rc=r10c3 , rc=r10c4 , rc=r10c5 , rc=r10c6 , rc=r10c7 , rc=r10c8 , rc=r11c3 , rc=r11c6 , rc=r11c7 , rc=r11c8 , rc=r12c4 , rc=r12c5 , rc=r12c6 , rc=r12c7 , rc=r12c8 , rc=r13c5 , rc=r13c6 , rc=r13c7 , rc=r13c8 , rc=r14c6 , rc=r14c7 , rc=r14c8 , rc=r9c3 , rc=r9c4 , rc=r9c5 , rc=r9c6 p1019-bd xp1019 vd=5.0 v id1=100 ma, id2=200 ma, id3=400ma 10 11 12 13 14 15 16 17 18 19 20 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 frequency (ghz) gain (db) xp1019 vd=5.0 v id1=100 ma, id2=200 ma, id3=400ma -80 -70 -60 -50 -40 -30 -20 -10 0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 frequency (ghz) reverse isolation (db) xp1019 vd=5.0 v id1=100 ma, id2=200 ma, id3=400ma -25 -20 -15 -10 -5 0 5 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 frequency (ghz) input return loss (db) xp1019 vd=5.0 v id1=100 ma, id2=200 ma, id3=400ma -40 -35 -30 -25 -20 -15 -10 -5 0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 frequency (ghz) output return loss (db) mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2008 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. october 2008 - rev 10-oct-08
17.0-24.0 ghz gaas mmic power amplifier s-parameters page 3 of 8 typical s-parameter data for xp1019 vd=5.0 v id=700 m a frequency s11 s11 s21 s21 s12 s12 s22 s22 (ghz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 10.0 0.252 122.39 0.379 -26.37 0.0003 -163.87 0.890 -89.12 11.0 0.373 112.12 0.920 -102.87 0.0006 172.52 0.872 -98.32 12.0 0.391 89.89 1.507 -169.30 0.0007 159.33 0.858 -108.64 13.0 0.349 61.57 2.365 133.83 0.0010 137.93 0.829 -120.69 14.0 0.279 22.84 3.747 76.53 0.0008 108.61 0.776 -134.36 15.0 0.237 -28.45 5.584 14.91 0.0009 112.87 0.687 -149.39 16.0 0.260 -78.69 7.363 -49.63 0.0010 106.94 0.566 -165.22 17.0 0.314 -114.97 8.498 -113.35 0.0010 102.86 0.426 178.12 18.0 0.356 -142.47 8.985 -174.76 0.0021 74.88 0.264 157.69 19.0 0.363 -162.55 8.815 126.97 0.0023 33.03 0.078 138.88 20.0 0.355 -177.85 8.498 72.57 0.0022 -12.77 0.086 -77.25 21.0 0.351 164.00 8.600 19.84 0.0006 -41.57 0.202 -91.01 22.0 0.294 136.19 9.007 -35.96 0.0004 5.99 0.285 -113.09 23.0 0.167 83.71 9.510 -98.83 0.0008 20.82 0.335 -139.02 24.0 0.193 -39.25 8.785 -171.72 0.0010 1.80 0.356 -170.99 25.0 0.373 -94.57 6.139 113.00 0.0011 -24.23 0.381 145.32 26.0 0.479 -119.90 3.595 44.81 0.0008 -61.44 0.451 95.77 27.0 0.563 -134.63 1.901 -17.57 0.0006 -89.82 0.573 50.86 28.0 0.646 -146.72 0.923 -73.69 0.0004 -107.07 0.704 15.17 29.0 0.723 -158.47 0.422 -122.99 0.0003 -105.82 0.797 -11.82 30.0 0.779 -169.75 0.188 -165.79 0.0006 168.26 0.850 -32.73 p1019-bd mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2008 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. october 2008 - rev 10-oct-08
page 4 of 8 mechanical drawing bias arrangement bypass capacitors - see app note [2] (note: engineering designator is 20mpa0723) units: millimeters (inches) bond pad dimensions are shown to center of bond pad. thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), backside is ground, bond pad/backside metallization: gold all dc bond pads (except vd3) are 0.100 x 0.100 (0.004 x 0.004). all rf bond pads (and vd3) are 0.100 x 0.200 (0.004 x 0.008) bond pad centers are approximately 0.109 (0.004) from the edge of the chip. dicing tolerance: +/- 0.005 (+/- 0.0002). approximate weight: 2.07 mg. bond pad #1 (rf in) bond pad #2 (vd1) bond pad #3 (vd2) bond pad #4 (vd3) bond pad #5 (rf out) bond pad #6 (ref ) bond pad #7 (vdet) bond pad #8 (det) bond pad #9 (vg3) bond pad #10 (vg2) bond pad #11 (vg1) 17.0-24.0 ghz gaas mmic power amplifier 1.330 (0.052) 1 2 3 4 5 6 7 8 10 0.840 (0.033) 1.334 (0.053) 1.788 (0.070) 2.400 (0.094) 2.236 (0.088) 1.930 (0.076) 9 1.650 (0.065) 0.947 (0.037) 0.0 0.0 0.683 (0.027) 0.683 (0.027) 11 0.588 (0.023) 2.510 (0.099) 1 2 3 4 5 6 7 8 10 9 11 rf in vg1 rf out vg2 vd1 vd2 vd3 vg3 det vdet ref p1019-bd mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2008 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. october 2008 - rev 10-oct-08
17.0-24.0 ghz gaas mmic power amplifier page 5 of 8 app note [1] biasing - it is recommended to separately bias each amplifier stage vd1 through vd3 at vd(1,2,3)=5.0v with id1=100ma, id2=200ma and id3=300ma. separate biasing is recommended if the amplifier is to be used at high levels of saturation, where gate rectific ation will alter the effective gate control voltage. for non-critical applications it is possible to parallel all stages and adjust the common gate voltage for a total drain current id(total)=700 ma. it is also recommended to use active biasing to keep the currents constant as the rf power and temper ature vary; this gives the most reproducible results. depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. the gate of the phemt is controlled to maintain correct drain current and thus drain voltage. the typical gate voltage needed to do this is -0.7v. typically the gate is protected with silicon diodes to limit the applied voltage. also, make sure to sequence the applied voltage to ensure n egative gate bias is available before applying the positive drain supply. app note [2] bias arrangement - for parallel stage bias (recommended for general applications) -- the same as individual stage bias but all the drain or gate p ad dc bypass capacitors (~100-200 pf) can be combined. additional dc bypass capacitance (~0.01 uf) is also recommended to all dc or combinat ion (if gate or drains are tied together) of dc bias pads. for individual stage bias (recommended for saturated applications) -- each dc pad (vd1,2,3 and vg1,2,3) needs to have dc bypass capacitance (~100-200 pf) as close to the device as possible. additional dc bypass capacitance (~0.01 uf) is also recommended. app note [3] on board detector ? the output signal of the power amplifier is coupled via a 15 db directional coupler to a detector, which comprises a diode connected to the signal path, and a second diode used to provide a temperature compensation signal. the commo n bias terminal is vdet, and is nominally set to forward bias both diodes. the vdet port can be connected directly to a 5v bias, and g iven the internal series resistance, results in about 1ma of bias current. app note [4] output power adjust using drain/gate control ? this device has a very useful additional feature. the output power can be adjusted by lowering the combined drain voltages and individual or combined gate voltages towards pinch off without sacrificing much in the way of input/output 3rd order intercept point. improvements to the iip3/oip3 while attenuating the gain are also possible with indi vidual gate control. data here has been taken using combined drain and gate control (all gates changed together) to lower the device?s output power. the results are shown below. additionally, the accompanying graph shows the typical level of attenuation achievable as the drain and gate is ad justed at various levels until pinch-off. p1019-bd r10c10_0696nd_c_029ba101 vs pin: video (mv) vs. power out (dbm) 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 0123456789101112131415161718192021222324252627282930 power out (dbm) video (mv) , input freq (ghz)=17.5 , input freq (ghz)=18 , input freq (ghz)=18.5 , input freq (ghz)=19 , input freq (ghz)=19.5 , input freq (ghz)=17.5 , input freq (ghz)=18 , input freq (ghz)=18.5 , input freq (ghz)=19 , input freq (ghz)=19.5 , input freq (ghz)=17.5 , input freq (ghz)=18 , input freq (ghz)=18.5 , input freq (ghz)=19 , input freq (ghz)=19.5 0696nd with bcb: pout vs. da value @ pin=+5 dbm vd123=5 -> 1.5 v, id1=100 -> 0 ma, id2=200 -> 0 ma, id3=400 -> 0 ma -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 16 17 18 19 20 21 22 23 24 frequency (ghz) output power (dbm) , vdr=1.5 , vdr=1.6 , vdr=1.7 , vdr=1.8 , vdr=1.9 , vdr=2 , vdr=2.1 , vdr=2.2 , vdr=2.3 , vdr=2.4 , vdr=2.5 , vdr=3 , vdr=3.5 , vdr=4 , vdr=4.5 , vdr=5 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2008 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. october 2008 - rev 10-oct-08
17.0-24.0 ghz gaas mmic power amplifier page 6 of 8 mttf graph these numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricati ng foundry. p1019-bd xp1019 vd=5.0 v, id1=100 ma, id2=200 ma, id3=400 ma 1.00e+03 1.00e+04 1.00e+05 1.00e+06 1.00e+07 1.00e+08 1.00e+09 55 65 75 85 95 105 115 125 backplate temperature (deg c) mttf (hours) no rf pout=+27 dbm xp1019 vd=5.0 v, id1=100 ma, id2=200 ma, id3=400 ma 25 27 29 31 33 35 37 55 65 75 85 95 105 115 125 backplate temperature (deg c) rth (deg c/w) no rf po ut =+2 7 dbm xp1019 vd=5.0 v, id1=100 ma, id2=200 ma, id3=400 ma 125 150 175 200 225 250 275 55 65 75 85 95 105 115 125 backplate temperature (deg c) tch (deg c) no rf po u t =+2 7 d bm xp1019 vd=5.0 v, id1=100 ma, id2=200 ma, id3=400 ma 1.00e+00 1.00e+01 1.00e+02 1.00e+03 1.00e+04 1.00e+05 55 65 75 85 95 105 115 125 backplate temperature (deg c) fits no rf pout=+27 dbm mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2008 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. october 2008 - rev 10-oct-08
17.0-24.0 ghz gaas mmic power amplifier page 7 of 8 vd1 vd2 vd3 vg1 vg2 vg3 rfin rfout stage 1 stage 2 stage 3 typical application mimix broadband mmic-based 18.0-25.0 ghz transmitter block diagram (changing lo and if frequencies as required allows design to operate as high as 25.0 ghz) if in 2.0 ghz xb1004 xp1019 xu1002 sideband reject rf out 17.7-19.7 ghz lo(+2.0dbm) 7.85-8.85 ghz (usb operation) 9.85-10.85 ghz (lsb operation) mimix broadband's 18.0-25.0 ghz xu1002 gaas mmic transmitter can be used in saturated radio applications and linear modulation schemes up to 16 qam. the transmitter can be used in upper and lower sideband applications from 18.0-25.0 ghz. device schematic p1019-bd mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2008 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. october 2008 - rev 10-oct-08
17.0-24.0 ghz gaas mmic power amplifier page 8 of 8 handling and assembly information caution! - mimix broadband mmic products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ? do not ingest. ? do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. life support policy - mimix broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the president and general counsel of mimix broadband. as used herein: (1) life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) a critical component is any compone nt of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. esd - gallium arsenide (gaas) devices are susceptible to electrostatic and mechanical damage. die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. die attachment - gaas products from mimix broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. microstrip substrates should be brought as close to the die as possible. the mounting surface should be clean and flat. if using conductive epoxy, recommended epoxies are tanaka ts3332ld, die mat dm6030hk or dm6030hk-pt cured in a nitrogen atmosphere per manufacturer's cure schedule. apply epoxy sparingly to avoid getting any on to the top surface of the die. an epoxy fillet should be visible around the total die periphery. for additional information please see the mimix "epoxy specifications for bare die" application note. if eutectic mounting is preferred, then a fluxless g old- tin (ausn) preform, approximately 0.001 2 thick, placed between the die and the attachment surface should be used. a die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. the gold-tin eutectic (80% au 20% sn) has a melting point of approximately 280o c (note: gold germanium should be avoided). the work station temperature should be 310oc +/- 10oc. exposure to these extreme temperatures should be kept to minimum. the collet should be heated, and the die pre-heated to avoid excessive thermal shock. avoidance of air bridges and force impact are critical during placement. wire bonding - windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. the recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize rf port bond inductance. gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for dc bias connections. aluminum wire should be avoided. thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. bond force, time and ultrasonics are all critical parameters. bonds should be made from the bond pads on the die to the package or substrate. all bonds should be as short as possible. part number for ordering description xp1019-bd-000x where ?x? is rohs compliant die packed in ?v? - vacuum release gel paks or ?w? - waffle trays xp1019-bd-ev1 xp1019 die evaluation module p1019-bd mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2008 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. october 2008 - rev 10-oct-08 ordering information caution: esd sensitive appropriate precautions in handling, packaging and testing devices must be observed. proper esd procedures should be followed when handling this device.
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